多物理场计算方法和其在先进射频微器件和纳米器件中的应用

WS10: Computational Multi-physics Methods and Applications for advanced RF  Micro/Nanoelectronic Devices and Interconnects

Type: Half Day
Day/Date/Time: Thursday, 18 April 2013, 1330-1730
Location: Room 308
Organizers:
Prof. Wen-Yan Yin, Zhejiang University, Shanghai Jiao Tong University

Abstract:

Advanced RF Micro/Nanoelectronic Devices  and circuits are inherently multi-physics in nature. Electrical analysis, in particular, does not exist in its isolation since interaction between multiple domains is required.  Rather, other physical effects, like heat transfer and even mechanical stress, can have a large impact on their performance. For this reason, R&D of advanced RF micro/nanoelectronics devices, circuits and systems are now adopting tools that can help innovate beyond the more traditional limited scope of electromagnetics-only simulation tools, with all relevant physical field effects treated in some appropriate way.

This workshop will be focused on the presentations of several computational multi-physics methods and their successful applications for various RF micro/nanoelectronics devices, interconnects and circuits  made of different materials, miniaturized passives with high performance, thin film active devices and 3-D interconnects or 3-D transmission structures arising in high density 3-D integration for wireless communication. Also, fundamental physical principles changing with scales will be introduced and discussed.  From high frequency asymptotic approximation to quasi-static modeling, from classical electromagnetic phenomena to surface plasma and Casmir force, from electrical simulation to electrical-thermal co-simulation, this talk intends to review several key physical phenomena and corresponding mathematical models emerging from RF micro/nanoelectronics.

Title of each Presentation and the Author(s)/Affiliations:

Title 1: Computational Multi-physics Methods for Micro/Nanoelectronic Devices and Circuits

Prof. Wen-Yan Yin, Center for Optical and Electromagnetic Research, Zhejiang University, Center for Microwave and RF Technologies, Shanghai Jiao Tong University

Abstract: During this talk, the speaker will introduce several important issues in computational multiphysics solutions for micro/nanoelectronics, in particular including:
1)     Brief introduction of computational multi-physics methods for 3-D structures
2)     Thermal resistance network (TRN) method for capturing temperature effects in various silicon-based RF devices and its applications;
3)     Hybrid time-domain finite element method (TD-FEM) for characterizing of thermal effects in Micro/Nano structures and its applications;
4)     Hybrid time-domain electro-thermo-mechanical TD-FEM for characterizing of both temperature and thermal-induced stress in Micro/Nano structures and its applications.

Title 2: Multi-scale and Multi-physics modeling: Their role in 3D Integration

Prof. M. Swaminathan, Joseph M. Pettit Professor in Electronics, Director, Interconnect and Packaging Center, School of Electrical and Computer Engineering, Georgia Institute of Technology

Abstract: Over the last several years, the buzzword in the electronics industry has been “More than Moore”, referring to the embedding of components into the package substrate and stacking of ICs and packages using wirebond and package on package (POP) technologies. This has led to the development of technologies that can lead to the ultra-miniaturization of electronic systems with coining of terms such as SIP (System in Package) and SOP (System on Package). More recently, the semiconductor industry has started focusing more on 3D integration using Through Silicon Vias (TSV). This is being quoted as a revolution in the electronics industry by several leading technologists. 3D technology, an alternative solution to the scaling problems being faced by the semiconductor industry provides a 3rd dimension for connecting transistors, ICs and packages together with short interconnections, with the possibility for miniaturization, as never before. The semiconductor industry is investing heavily on TSVs as it provides opportunities for improved performance, bandwidth, lower power, reduced delay, lower cost and overall system miniaturization. A major bottleneck today for 3D system implementation is in the Electronic Design Automation (EDA) area.

In this talk, challenges in the design of 3D ICs and packages with a focus on design automation relating to multi-scale and multi-physics effects will be presented.

Title 3: Multi-physics Co-simulations and Their Applications

Prof. L.J. Jiang, Dept. of Electrical and Electronic Engineering, The University of Hong Kong

Abstract: In this talk, fundamental physical principles changing with scales will be introduced and discussed.  From high frequency asymptotic approximation to quasi-static modeling, from classical electromagnetic phenomena to surface plasma and Casmir force, from electrical simulation to electrical-thermal co-simulation, this talk intends to review several key physical phenomena and corresponding mathematical models emerging from RF micro/nanoelectronics.

Title 4: Modeling of silicon devices used in mm-wave circuits

Prof. Kai Kang

School of Electronic Engineering, University of Electronic Science and Technology of China

Abstract: Due to lossy silicon, passive devices such as inductors, transformers and transmission lines always suffer serious loss in millimeter-wave frequency regime. In order to reduce cost, mm-wave circuits usually have compact layout, therefore coupling effects between devices can not be neglected. Meanwhile, interconnects of MOSFET add parasitic capacitance, resistance and even inductance, which may affect transistor performance in mm-wave frequency band. In addition, foundrys' PDKs seldom provide models of both active and passive devices beyond 20 Ghz. Thus, designers need to build their customized mm-wave device models. In this talk, modeling methodologies of these devices will be discussed in details and equivalent circuit models will be established. Finally, several mm-wave circuits will be presented as applications of these lumped models.

Title 5: Multi-physics Characterization of Reliability of RF Semiconductor devices

Prof. Liang Zhou

Key Laboratory of Ministry of Education of Design and Electromagnetic Compatibility of High Speed Electronic Systems, Center for Microwave and RF Technologies, Shanghai Jiao Tong University

Abstract: Some computational multiphysics Methods will be introduced in detail for characterizing thermal breakdown effects in semiconductor devices such as LDMOS FET, GaN and GaAs based power amplifier under the impact of a conductive electromagnetic pulse (EMP) or ESD, with some experimental results also demonstrated so as to validate the simulation results.

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